Samsung has begun mass production of the industry’s first 512-gigabyte embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Consisting of eight 64-layer 512GB V-NAND chips and a controller chip, all stacked together, it doubles the density of Samsung’s previous 48-layer V-NAND-based 256GB eUFS, in the same amount of space as the 256GB package.



The Samsung 512GB eUFS also features strong read and write performance. With its sequential read and writes reaching up to 860 megabytes per second (MB/s) and 255MB/s respectively, the 512GB embedded memory enables transferring a 5GB-equivalent full HD video clip to an SSD in about six seconds, over eight times faster than a typical microSD card. For random operations, the new eUFS can read 42,000 IOPS and write 40,000 IOPS.

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Source: [H]ardOCP – Samsung Starts Producing 512GB Universal Flash Storage for Mobile Devices