Toshiba Announces 4-Bit QLC NAND Flash Memory

Toshiba has developed the world’s first QLC BICS flash 3D memory with 4-bit-per-cell technology. QLC happens to trail other memory hierarchies (SLC, MLC, TLC) in terms of latency, performance, and endurance, but some believe that this development may result in larger SSDs at cheaper prices. Others say these will be relegated to data centers, which would benefit from the lower power consumption and smaller footprint.



Toshiba’s new QLC BiCS FLASH device features a 64-layer stacked cell structure and achieves the world’s largest die capacity (768Gb/96GB). QLC flash memory also enables a 1.5-terabyte (TB) device with a 16-die stacked architecture in a single package – featuring the industry’s largest capacity4. This is a fifty percent increase in capacity per package when compared to Toshiba’s earlier announcement of a 1TB device with a 16-die stacked architecture in a single package – which also offered the largest capacity in the industry at the time.

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