Intel’s upcoming RibbonFET technology is set to debut in the company’s 20A node next year, but already the chip maker is showcasing the next step: 3D stacked CMOS (complementary metal oxide semiconductor) transistors. Though Intel had filed a patent for such a technology nearly two years ago, it was only in May at ITF World that Intel announced

Source: Hot Hardware – Intel Demos Transistor Scaling Breakthroughs To Keep Moore’s Law Relevant