Micron Unveils UFS 4.0 Mobile Storage Using 232-Layer NAND For Huge Bandwidth Gains

Micron Unveils UFS 4.0 Mobile Storage Using 232-Layer NAND For Huge Bandwidth Gains
Micron has announced that it is sending samples of its latest Universal Flash Storage (UFS) 4.0 ICs to smart device makers. Devices using these new NAND chips will benefit from double speed transfers compared to the previous gen UFS 3.1 solutions. The headlining figure given by Micron is that transfers of up to 4,300Mbps can be achieved. Additionally,

Source: Hot Hardware – Micron Unveils UFS 4.0 Mobile Storage Using 232-Layer NAND For Huge Bandwidth Gains