An anonymous reader quotes a report from The Stack: U.S. researchers have unveiled the world’s smallest transistor reported to date, combining a new mix of materials, which makes even the tiniest silicon-based transistor appear big in comparison. The team, led by the U.S. Department of Energy’s Lawrence Berkeley National Laboratory, designed the minuscule transistor with a working one-nanometer gate — far surpassing any industry expectation for reducing transistor sizes. In the scientific study, MoS2 transistors with 1-nanometer gate lengths, published today in the journal Science, the researchers describe a prototype device which uses a novel semiconductor material known as transition metal dichalcogenides (TMDs). The transistor structure uses a single-walled carbon nanotube as the gate electrode and molybdenum disulfide (MoS2) for the channel material, rather than silicon. “The semiconductor industry has long assumed that any gate below 5 nanometers wouldn’t work, so anything below that was not even considered. This research shows that sub-5-nanometer gates should not be discounted. Industry has been squeezing every last bit of capability out of silicon. By changing the material from silicon to MoS2, we can make a transistor with a gate that is just 1 nanometer in length, and operate it like a switch,” explained study lead Sujay Desai.

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Source: Slashdot – Law-Defying Transistor Smashes Industry ‘Limit’, Measures Just 1nm